Navitas Semiconductor

NVTS

Market cap $1.89B

First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas' Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers. First systems developed by EPFL featuring GeneSiC™ 3300V and 1200V SiC devices showcase the strength of Navitas' Grid and Energy infrastructure portfolio, accelerating the adoption of 800V DC AI data centers.

Sold 1,188,884 shares of Navitas Semiconductor Corporation; estimated trade size $11.44 million based on quarterly average pricing. Quarter-end position value decreased by $9.22 million, reflecting both trading activity and share price movement.

Navitas Semiconductor Corporation (NVTS) Presents at Morgan Stanley Technology, Media & Telecom Conference 2026 Transcript

Navitas is currently loss-making, but investors are buying the stock in anticipation of its partnership with Nvidia paying off. Management expects to return to sequential revenure growth in the first quarter of 2026.

Navitas is transitioning from low-margin mobile SiC to high-power SiC/GaN provider in AI data centers, with sequential revenue and gross margin improvements expected from FQ1'26 onwards. This is significantly aided by the ongoing product samplings across different OEMs/ODMs/hyperscalers, with numerous projects already in design/production stages. Despite a robust cash position of $236M, NVTS remains unprofitable and highly dilutive, with a premium FQ1'26 EV/Sales of 53.33x versus direct peers.

TORRANCE, Calif., Feb. 26, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor (Nasdaq: NVTS), a leader in GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, will exhibit its latest innovations for AI data centers, performance computing, energy and grid infrastructure, and industrial electrification at APEC 2026 (booth #2027) in San Antonio, Texas from March 22-26. At the event, Navitas will unveil the 10 kW ‘GaN-powered' 800 V–to–50 V DC-DC platform that employs advanced 650 V and 100 V GaNFast FETs in a three-level half-bridge architecture with synchronous rectification to deliver 98.5% peak efficiency. This full-brick package design platform achieves 2.1 kW/in³ power density and also supports + / - 400 VDC standard for AI datacenters. Additionally, Navitas will feature a 12 kW AI data center power supply, which leverages IntelliWeave™ digital control to achieve unmatched efficiency, power density, and performance, along with an 8.5 kW OCP power supply and 4.5 kW CRPS power supply.

TORRANCE, Calif., Feb. 25, 2026 (GLOBE NEWSWIRE) -- Navitas Semiconductor, (Nasdaq: NVTS), an industry leader in next-generation GaNFast™ gallium nitride (GaN) and GeneSiC™ silicon carbide (SiC) power semiconductors, today announced the company will participate at the Morgan Stanley Technology, Media and Telecom Conference to be held at the Palace Hotel in San Francisco, CA.

Navitas delivered an expected drop in revenue, but forecast sequential growth in the current quarter. Management also noted its high-power products for AI data centers and electrical infrastructure became a majority of revenues for the first time.

Navitas Semiconductor Corporation (NVTS) Q4 2025 Earnings Call Transcript

Navitas Semiconductor Q4 loss matches estimates as revenues fall 59% Y/Y, while guidance points to sequential improvement in Q1 2026.